YLN01-0812C2 is a high-performance GaAs Low Noise Amplifier MMIC designed to operate in the X-band.
The YLN01-0812C2 has an ultra-low noise figure of 1.2dB, and with a minimum 28dB of gain, the on chip matching provides better than 15dB input and output return loss. It can be used in Radar, Telecommunications, and Instrumentation.
This chip is fabricated using PHEMT process technology.
Feature
-
Operation frequency range: 8 GHz to 12 GHz
-
Noise figure < 1.2dB
-
Gain: 28dB
-
Gain flatness: +/-0.5dB
-
Output P1dB>13dBm
-
Input VSWR<1.5dB
-
Output VSWR<1.5dB
-
Power supply:59mA@4V
-
Die size 2.0mm x 1.1mm
APPLICATION
-
Radar
-
Telecommunications
-
Instrumentation

MAXIMUM VALUES
Tamb = + 25℃
Symbol | Parameter | Test conditions | Min. | Max. | Unit |
VD | Drain voltage | 0 | + 5 | V | |
ID | Drain current | 60 | mA | ||
PIN | RF input power | + 10 | dBm | ||
Tamb | Ambient temperature | – 55 | + 125 | °C | |
Tj | Junction temperature | + 150 | °C | ||
Tstg | Storage temperature | – 65 | + 150 | °C |
Operation of this device outside the parameter ranges given above may cause permanent damage.
ELECTRONICAL CHARACTERISTICS
Tamb=+25°C,VD=4V
Symbol | Parameter | Test conditions | Min. | Typ. | Max. | Unit |
RFIN | Input frequency | 8 | 12 | GHz | ||
Performances of bare die | ||||||
VD | Drain voltage | + 4 | V | |||
ID | Drain current | 54 | 56 | 59 | mA | |
G | Gain | 27.5 | 28.5 | 28.8 | dB | |
NF | Noise figure | 0.8 | 1.1 | 1.2 | dB | |
P1dB | 1dB compression point output power | 13 | 13.5 | 14 | dBm | |
VSWRIN | Input VSWR | 0.3nH gold wire | 1.4 | dB | ||
VSWROUT | Output VSWR | 0.3nH gold wire | 1.3 | dB |
![]() |
Caution: This device is a high-performance RF component and can be damaged by inappropriate handling. Standard ESD precautions should be followed. |
Reviews
There are no reviews yet.