CGY2190UH/C2, 75-110GHz W-band Low Noise Amplifier

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75-110GHz W-band Low Noise Amplifier

$396.83

– Part No.: CGY2190UH/C2
– Manufacturer: OMMIC
– Wide frequency range: 75-110 GHz, Suitable for W-band applications
– 23 dB small signal gain, Output P1dB : + 1 dBm
– Ultra Low Power consumption
(33 mW @ VD=1 & VG=0 V; 22 mW @ VD=1.2 & VG=-0.1 V )
– Mid-band NF = 2.8 dB at 90 GHz, Chip size = 2000 x 3000 µm
– Samples Available now, Space and MIL-STD Available

Quantity	Discount (%)	Price
1 - 24	—	$396.83
25 - 99	6.67 %	$370.37
100 - 499	12.5 %	$347.22
500 - 999	19.98 %	$317.55
1,000 - 1,999	31.39 %	$272.26
2,000+	44.12 %	$221.75

The CGY2190UH/C2 is a very high-performance W-band Low Noise Amplifier MMIC.

The CGY2190UH/C2 is a 4 stages Low Noise Amplifier with an exceptional Low Noise Figure of 2.8 dB at 90 GHz combined with an ultra low power consumption (V_D=1 V, V_G=0, total Drain current = 33mA).

This makes the MMIC very suitable for Security Applications (Millimeter wave Imaging), Space (Earth Observation) and Telecommunications.

The MMIC is manufactured using OMMIC’s advanced proprietary 70 nm MHEMT technology.

Feature

Suitable for W-band applications
Wide frequency range : 75 – 110 GHz
23 dB small signal gain
Output P1dB : + 1 dBm
Ultra Low Power consumption
(33 mW @ V_D=1 & V_G=0 V)
(22 mW @ V_D=1.2 & V_G=-0.1V )
Mid-band NF = 2.8 dB at 90 GHz
Chip size = 2000 x 3000 µm
Samples Available now
Space and MIL-STD Available

APPLICATION

Millimeter Wave active and passive Imaging
Earth Observation
E-band communications
Radar
General purpose amplifier

Limiting Values

T_amb = + 25°C, unless otherwise specified.

Symbol	Parameter	Conditions	MIN.	MAX.	UNIT
V_D1, V_D2, V_D3, V_D4	Drain voltage		0	2	V
I_D1total	Total Drain current			50	mA
V_G1, V_G2, V_G3, V_G4	Gate supply voltage	V_Dx ope-circuited	-2	0,6	V
T_stg	Storage temperature		-55	+150	°C
T_j	Junction temperature			+150	°C
T_amb	Ambient temperature		-40	+85	°C
P_in^max	Maximum RF input power in CW			+16	dBm

Thermal Characterstics

Symbol	Parameter	Value	UNIT
R_{th (j-a)}	Thermal resistance from junction to ambient (DC power at T_a =25 °C)	TBD	°C/W

DC CHARACTERISTICS

T_amb = + 25°C, V_DD = 1 V; unless otherwise specified.

Symbol	Parameter	Conditions	MIN.	TYP.	MAX.	UNIT
V_D1, V_D2, V_D3, V_D4	Drain voltage		+0.8	+1	+1.2	V
I_D total	Total Drain current	See notes 1, 2		33		mA
V_G1, V_G2, V_G3, V_G4	Gate supply voltage		-0.1	0.0	+0.1	V

NOTE
1. As bias is considered to be a drain V_D voltage and a drain current I_D, we have V_G1 determining the drain current I_D1, V_G2 determining the drain current I_D2, V_G3 determining the drain current I_D3 and V_G4 determining the drain current I_D4. Bias currents are set in NO RF conditions.
2. Total drain current I_{D total} = I_D1 + I_D2 + I_D3 + I_D4 with I_D1 = I_D2 = I_D3 = I_D4

RF CHARACTERISTICS

T_amb = 25 °C, all V_D = 1 V, all V_G = 0 V, I_{D total} = 33 mA. On-wafer measurements using 50 Ω RF probes. Unless otherwise specified.

Symbol	Parameter	Conditions	MIN.	TYP.	MAX.	UNIT
Gain	Reference Gain	F = 75 GHz to 90 GHz		25		dB
Gain	Reference Gain	F = 90 GHz to 110 GHz		22		dB
S11	Input return loss	F = 75 GHz to 90 GHz		-6		dB
S11	Input return loss	F = 90 GHz to 110 GHz		-6		dB
S22	Output return loss	F = 75 GHz to 90 GHz		-12		dB
S22	Output return loss	F = 90 GHz to 110 GHz		-4		dB
S12	Isolation	F = 75 GHz to 90 GHz		-35		dB
P1dB	1dB compression point			1		dBm
NF	Noise Figure	F = 90 GHz		2.8		dB
NF	Noise Figure	F = 75 GHz to 110 GHz			3.3	dB
K	Microwave stability factor.	F = 75 GHz to 110 GHz	1

Caution: This device is a high-performance RF component and can be damaged by inappropriate handling. Standard ESD precautions should be followed. OMMIC document “OMCI-MV/ 001/ PG” contains more information on the precautions to take.

Measurements

Measured Performance

T_amb = 25 °C, all V_D = 1 V, all V_G = 0 V, I_{D total} = 33 mA, on wafer measurements.

Gain

Input Return Loss

Output Return Loss

Reverse Isolation

S-Parameters VS. Frequency

NOISE FIGURE VS. FREQUENCY (SIMULATIONS)

POWER & GAIN COMPRESSION, PAE VS. INPUT POWER

S Parameters

TYPICAL SCATTERING PARAMETERS

T_amb = 25 °C, all V_D = 1 V, all V_G = 0 V, I_{D total} = 33 mA, on wafer measurements.

for frequencies from 50 to 75 GHz

Frequency	Mag S11	Ang S11	Mag S21	Ang S21	Mag S12	Ang S12	Mag S22	Ang S22
50	0.2982181	136.858	1.521719	10.62	0.0117366	-84.57	0.3220791	-105.187
50.6	0.2991305	135.317	1.637569	0.524	0.0128172	-75.579	0.3351781	-108.824
51.2	0.2835923	134.306	1.770367	-10.313	0.0112012	-94.585	0.3455057	-111.285
51.8	0.2778504	133.489	1.903314	-21.099	0.010644	-88.193	0.3521712	-112.989
52.4	0.2738388	130.7	2.048315	-31.831	0.008989	-64.295	0.3608411	-116.582
53	0.2751059	129.038	2.188627	-41.882	0.0116846	-91.635	0.3813257	-118.968
53.6	0.2765462	126.888	2.332392	-51.728	0.0118958	-85.777	0.3830699	-122.125
54.2	0.2619643	125.367	2.487604	-62.164	0.0108184	-83.997	0.3994495	-126.31
54.8	0.2809864	122.725	2.673945	-72.443	0.0108903	-29.815	0.4097102	-132.232
55.4	0.2732295	117.981	2.812046	-83.773	0.011644	-51.307	0.4131721	-135.05
56	0.2705325	112.859	2.946667	-93.418	0.0159126	-40.277	0.405599	-138.205
56.6	0.2463726	107.568	3.147299	-102.512	0.0230115	-63.697	0.3969322	-138.668
57.2	0.2489077	109.277	3.404848	-113.103	0.0153749	-69.989	0.4215285	-143.315
57.8	0.2422256	100.417	3.620036	-122.707	0.0187579	-81.681	0.4086497	-145.846
58.4	0.2378602	100.862	3.850288	-133.011	0.0189255	-72.538	0.4283686	-150.561
59	0.2335796	94.917	4.10372	-141.985	0.0238764	-84.268	0.4068177	-151.811
59.6	0.2369317	97.477	4.528957	-152.773	0.0165251	-73.493	0.429353	-155.864
60.2	0.2464809	91.685	4.847024	-162.774	0.0163471	-68.783	0.4289137	-159.973
60.8	0.2483342	84.272	5.207413	-172.673	0.0172508	-88.765	0.4413541	-162.8
61.4	0.2591242	73.774	5.682133	176.394	0.0247541	-77.49	0.4154444	-166.051
62	0.2458217	70.619	6.085452	166.117	0.0175594	-75.628	0.4118215	-167.949
62.6	0.2680267	62.404	6.620348	154.984	0.0159432	-72.091	0.4143946	-172.18
63.2	0.2612176	57.9	7.173803	142.953	0.0177334	-79.43	0.420069	-177.368
63.8	0.2505264	55.189	7.838798	131.245	0.0094205	-67.578	0.4500825	178.264
64.4	0.2543381	47.702	8.596288	119.366	0.0088168	-70.58	0.4461989	170.771
65	0.2312036	42.353	9.094391	106.89	0.0164677	-73.685	0.432794	168.368
65.6	0.2374708	34.358	9.6807	93.77	0.0163844	-67.345	0.3864835	160.709
66.2	0.2532244	30.807	10.40626	81.68	0.015959	-70.452	0.4003494	155.025
66.8	0.2740742	23.728	10.94241	67.229	0.0151887	-73.56	0.366474	149.648
67.4	0.2551124	18.489	11.51559	55.283	0.0153067	-69.594	0.349087	142.173
68	0.2484943	7.039	11.93738	43.165	0.0161808	-62.632	0.3460235	138.589
68.6	0.2730486	3.253	12.48595	30.313	0.0173403	-69.704	0.3226236	140.687
69.2	0.2741468	3.875	13.37799	17.378	0.01615	-74.528	0.3258093	130.308
69.8	0.2684623	-7.119	13.87262	5.173	0.0157844	-73.698	0.297912	127.274
70.4	0.2736076	-15.218	14.42307	-7.601	0.0142821	-68.789	0.3057601	123.643
71	0.2585235	-16.089	14.98746	-21.1	0.0159524	-66.429	0.2654508	112.747
71.6	0.2715395	-16.204	15.28708	-33.657	0.0156963	-68.569	0.2655582	101.973
72.2	0.2729822	-27.197	15.79285	-44.836	0.0150619	-65.126	0.2531583	99.92
72.8	0.2838779	-27.418	16.49534	-58.369	0.0153393	-64.86	0.2177594	98.672
73.4	0.239591	-23.568	16.87806	-70.031	0.0163565	-61.756	0.1800343	76.348
74	0.3038566	-27.664	17.38081	-84.102	0.0153231	-60.2	0.1854885	78.999
74.6	0.3372033	-19.578	18.12516	-97.492	0.0173941	-56.281	0.1356745	72.564
Frequency	Mag S11	Ang S11	Mag S21	Ang S21	Mag S12	Ang S12	Mag S22	Ang S22

TYPICAL SCATTERING PARAMETERS

T_amb = 25 °C, all V_D = 1 V, all V_G = 0 V, I_{D total} = 33 mA, on wafer measurements.

for frequencies from 75 to 100 GHz

Frequency	Mag S11	Ang S11	Mag S21	Ang S21	Mag S12	Ang S12	Mag S22	Ang S22
75.2	0.3655878	-24.299	18.67595	-111.818	0.0199878	-54.233	0.1409742	59.869
75.8	0.3898939	-35.717	18.20294	-127.467	0.0207195	-62.569	0.1952892	47.808
76.4	0.448431	-46.965	17.92479	-141.083	0.0189113	-67.116	0.1796639	36.699
77	0.4628063	-49.398	18.6772	-152.687	0.0193694	-66.885	0.1634366	22.432
77.6	0.4640689	-56.878	18.87635	-166.893	0.0188255	-68.302	0.1638689	4.367
78.2	0.4751359	-62.992	18.40462	179.078	0.0193441	-68.497	0.1681725	-6.57
78.8	0.4786509	-65.523	19.07763	166.057	0.0187892	-69.165	0.1826266	-39.229
79.4	0.4496713	-72.751	18.6877	152.727	0.0180221	-66.299	0.1901534	-61.98
80	0.4731657	-77.917	18.13652	137.502	0.0167318	-67.727	0.1681515	-55.456
80.6	0.461199	-80.981	17.97556	125.02	0.0182252	-65.854	0.1294181	-80.202
81.2	0.4936127	-86.962	17.40521	110.853	0.0190084	-67.739	0.1021526	-81.483
81.8	0.4914949	-90.904	16.89226	99.593	0.0186373	-67.104	0.0926112	-92.888
82.4	0.5299829	-89.714	16.94704	87.856	0.019495	-67.381	0.0678824	-106.315
83	0.508279	-91.238	15.92358	77.125	0.0189078	-66.758	0.0696541	-103.062
83.6	0.5123367	-99.679	15.0448	65.824	0.0181864	-66.356	0.0963001	-79.514
84.2	0.5196509	-108.313	14.27014	56.676	0.0174247	-69.697	0.1376533	-66.491
84.8	0.5017485	-113.184	14.13922	47.603	0.0180619	-73.054	0.1393447	-63.875
85.4	0.5082548	-116.098	13.90955	40.977	0.0166947	-75.173	0.1523791	-72.122
86	0.5036548	-122.802	14.42556	32.144	0.0167937	-69.739	0.1507656	-78.458
86.6	0.4476695	-126.204	14.9775	24.26	0.016895	-68.223	0.1612786	-96.979
87.2	0.4101446	-130.524	15.39975	12.799	0.0154421	-65.364	0.2121881	-102.226
87.8	0.3979397	-132.423	16.28458	0.687	0.0146738	-67.396	0.193052	-106.305
88.4	0.3868184	-134.904	16.87831	-12.549	0.0145329	-61.666	0.1938861	-113.297
89	0.3427024	-133.05	17.24059	-25.946	0.0156177	-58.291	0.133881	-133.297
89.6	0.3570098	-134.666	17.89789	-39.238	0.0157422	-56.226	0.1178564	-132.091
90.2	0.3332651	-131.862	17.81166	-52.628	0.0164443	-56.233	0.0865232	-121.035
90.8	0.3392017	-131.761	18.09841	-65.873	0.0171386	-55.398	0.0645768	-88.292
91.4	0.2991918	-132.749	17.49998	-80.417	0.0167264	-56.121	0.0830255	-100.231
92	0.3208926	-134.377	17.52068	-93.001	0.0164651	-54.966	0.1111984	-95.725
92.6	0.3013404	-138.285	17.36959	-105.713	0.0155776	-53.094	0.1118116	-113.767
93.2	0.2978264	-140.496	17.30036	-117.703	0.016884	-51.449	0.0976565	-94.747
93.8	0.2679875	-141.926	17.22009	-129.359	0.0178283	-49.553	0.1023382	-64.22
94.4	0.2463734	-123.718	17.03136	-140.927	0.0191523	-47.702	0.1305663	-36.465
95	0.2782122	-122.688	17.17265	-152.801	0.0186418	-55.31	0.1721944	-52.232
95.6	0.3064077	-116.064	16.8933	-165.376	0.0179834	-51.948	0.2093689	-59.919
96.2	0.3581428	-119.208	16.97392	-176.541	0.0187232	-54.221	0.2663027	-71.537
96.8	0.4107239	-119.24	16.69737	170.805	0.0190478	-51.253	0.2865073	-74.918
97.4	0.4703694	-123.539	15.89973	157.71	0.0184244	-53.336	0.2753621	-78.598
98	0.4788866	-130.672	16.02182	145.539	0.0176359	-54.508	0.2652815	-80.086
98.6	0.4957076	-139.38	15.91841	133.695	0.0176033	-60.33	0.2584856	-84.825
99.2	0.5037282	-151.15	16.14377	123.005	0.0180435	-58.439	0.3024211	-87.474
99.8	0.4969701	-156.154	15.87777	111.259	0.017998	-62.262	0.3260347	-87.194
Frequency	Mag S11	Ang S11	Mag S21	Ang S21	Mag S12	Ang S12	Mag S22	Ang S22

TYPICAL SCATTERING PARAMETERS

T_amb = 25 °C, all V_D = 1 V, all V_G = 0 V, I_{D total} = 33 mA, on wafer measurements.

for frequencies from 100 to 110 GHz

Frequency	Mag S11	Ang S11	Mag S21	Ang S21	Mag S12	Ang S12	Mag S22	Ang S22
100.4	0.4883492	-162.859	15.88958	99.061	0.0164471	-61.476	0.3589204	-90.307
101	0.452923	-163.94	15.56929	86.901	0.0142966	-62.96	0.365615	-93.516
101.6	0.4533625	-166.881	15.21612	74.987	0.0106666	-56.222	0.3971485	-93.538
102.2	0.4233523	-168.718	14.83496	63.068	0.008945	-37.094	0.4056313	-93.436
102.8	0.4388847	-173.155	14.47684	50.097	0.0112758	-25.785	0.4060111	-94.921
103.4	0.4097394	178.69	14.19749	38.423	0.0129611	-33.353	0.4288204	-99.865
104	0.4147567	173.582	13.8526	26.547	0.014237	-22.752	0.4695547	-104.544
104.6	0.4083843	167.572	13.62229	14.365	0.0176424	-20.787	0.5090374	-110.269
105.2	0.3904379	168.47	13.05179	2.063	0.0173289	-18.369	0.5168212	-110.139
105.8	0.3647446	164.578	12.65758	-10.024	0.0159788	-24.888	0.5362576	-110.94
106.4	0.3379544	160.117	12.3979	-21.567	0.0152392	-22.532	0.5374929	-115.181
107	0.3458246	151.787	12.01139	-33.835	0.0181428	-21.728	0.5439451	-120.8
107.6	0.3551902	144.107	11.58376	-46.117	0.0206512	-19.794	0.5490074	-125.567
108.2	0.3735513	139.76	11.25829	-57.673	0.0208611	-19.756	0.5710843	-126.77
108.8	0.3623558	131.721	10.83785	-70.638	0.0211204	-21.418	0.5616172	-131.055
109.4	0.3752054	130.444	10.57739	-82.9	0.020305	-19.35	0.5803059	-134.312
110	0.3680994	121.867	10.11837	-95.105	0.020294	-19.779	0.5875989	-135.482
Frequency	Mag S11	Ang S11	Mag S21	Ang S21	Mag S12	Ang S12	Mag S22	Ang S22

Information

STABILITY

K factor can be computed from the S parameters over frequency and gives the following:

The device is unconditionally stable in its usable range.

APPLICATION INFORMATION

Typical application scheme

A recommended typical module layout is proposed below. In this figure, RF input and output are using coplanar transmission lines, however, microstrip transmission lines can be used with similar performances. All path lengths and physical sizes of the components should be minimized.

The device have been designed and optimized to support a bonding equivalent to an inductance of 80nH to connect the 50 Ohms coplanar or microstrip transmission lines. In order to minimize inductance, a Ribbon bonding technique can also be used.

All others bonding inductances (i.e. to pads V_D1, V_D2, V_D3, V_D4, and V_G1, V_G2, V_G3, V_G4) should also be kept as short as possible.

High frequency decoupling capacitors are available on-chip, external decoupling chip capacitors >47 pF and 100nF Surface Mount capacitors are used to improve the power supply rejection. Very low frequency decoupling capacitors (1uF) can also be implemented, at very high frequencies, each transistor of the die has a very high gain.

Via holes are available on-chip to connect the front side to the back side of the chip. A good RF grounding connection should be maintained between the backside of the chip and system ground. AuSn or silver conductive epoxy material can be used for die attach.

Figure 2: CGY2190UH/C2 die layout: coplanar assembly

OPERATING AND HANDLING INSTRUCTIONS

The CGY2190UH/C2 is a very high performance device and as such, care must be taken at all time to avoid damages due to inappropriate handling, mounting, packaging and biasing conditions.

1- Power Supply Sequence

The following power supply sequence is recommended.

1. Pinch off the device by setting V_G1 = V_G2 = V_G3 = V_G4 = - 1 V.
2. Increase V_D = 1.0 V while monitoring the drain current.
3. Increase the gate voltages V_G from -1 V to the value needed to reach the targeted drain current I_Dtotal = 33 mA (typically V_G1 =0V).
4. Apply the RF input.

2- Mounting and ESD handling precautions

For high performance devices such as CGY2190UH/C2, care must be taken while mounting, bonding and eventually sealing the packages and hence obtain the most reliable long-term operation. The temperature, duration, material and sealing techniques compatible with GaAs MMICs and the precautions to be taken are described in OMMIC’s document “OM-CI-MV/001/PG”, entitled, “Precautions for III-V users”.

Pad & Package

BLOCK DIAGRAM AND PAD CONFIGURATION

PAD POSITION

SYMBOL	PAD	COORDINATES (1)		DESCRIPTION
SYMBOL	PAD	X	Y	DESCRIPTION
GND	1	130	730	Connected to ground with on-chip via hole
IN	2	130	880	RF input
GND	3	130	1030	Connected to ground with on-chip via hole
NC	4	270	130	Not Connected
GND1	5	570	130	Connected to ground with on-chip via hole
V_D1	6	870	130	Drain supply voltage 1 (2)
V_D2	7	1170	130	Drain supply voltage 2 (2)
GND2	8	1470	130	Connected to ground with on-chip via holes
GND3	9	1770	130	Connected to ground with on-chip via holes
V_D3	10	2070	130	Drain supply voltage 3 (2)
GND4	11	2370	130	Connected to ground with on-chip via holes
V_D4	12	2670	130	Drain supply voltage 4 (2)
GND	13	2870	730	Connected to ground with on-chip via hole
OUT	14	2870	880	RF output
GND	15	2870	1030	Connected to ground with on-chip via hole
V_G1	16	400	1860	Gate supply voltage 1 (2)
GND	17	700	1860	Connected to ground with on-chip via hole
V_G2	18	1000	1860	Gate supply voltage 2 (2)
GND	19	1300	1860	Connected to ground with on-chip via hole
GND	20	1600	1860	Connected to ground with on-chip via hole
V_G3	21	1900	1860	Gate supply voltage 3 (2)
GND	22	2200	1860	Connected to ground with on-chip via hole
V_G4	23	2500	1860	Gate supply voltage 4 (2)
NC	24	2800	1860	Not Connected

NOTE

All x and y coordinates in µm represent the position of the centre of the pad with respect to the lower left corner of the chip layout (see the bonding pattern).
Must be decoupled to ground using external capacitor(s)

Bonding Pads

Mechanical Information

PARAMETER		VALUE
Size		2000 x 3000 µm (Tolerance : +/- 15 µm)
Thickness		100 µm
Backside material		TiAu
Passivation		PECVD deposited Si3N4
Bonding pad dimensions	GND	60 x 100 µm
	IN, OUT, V_G1, V_G2, V_G3, V_G4, V_D1, V_D2, V_D3, V_D4, GND1, GND2	80 x 80 µm

Datasheet & Order Code

Document Download

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ORDERING INFORMATION

Generic type	Package type	Version	Description
CGY2190UH	Bare Die	C2	MHEMT Semi-conductor die. External dimensions : 2000 x 3000 µm (Tolerance : ±15 µm). Die thickness: 0.1 mm. Backside material: TiAu