The CGY2190UH/C2 is a very high-performance W-band Low Noise Amplifier MMIC.
The CGY2190UH/C2 is a 4 stages Low Noise Amplifier with an exceptional Low Noise Figure of 2.8 dB at 90 GHz combined with an ultra low power consumption (VD=1 V, VG=0, total Drain current = 33mA).
This makes the MMIC very suitable for Security Applications (Millimeter wave Imaging), Space (Earth Observation) and Telecommunications.
The MMIC is manufactured using OMMIC’s advanced proprietary 70 nm MHEMT technology.
Feature
-
Suitable for W-band applications
-
Wide frequency range : 75 – 110 GHz
-
23 dB small signal gain
-
Output P1dB : + 1 dBm
-
Ultra Low Power consumption
(33 mW @ VD=1 & VG=0 V)
(22 mW @ VD=1.2 & VG=-0.1V ) -
Mid-band NF = 2.8 dB at 90 GHz
-
Chip size = 2000 x 3000 µm
-
Samples Available now
-
Space and MIL-STD Available
APPLICATION
-
Millimeter Wave active and passive Imaging
-
Earth Observation
-
E-band communications
-
Radar
-
General purpose amplifier

Limiting Values
Tamb = + 25°C, unless otherwise specified.
Symbol | Parameter | Conditions | MIN. | MAX. | UNIT |
VD1, VD2, VD3, VD4 | Drain voltage | 0 | 2 | V | |
ID1 total | Total Drain current | 50 | mA | ||
VG1, VG2, VG3, VG4 | Gate supply voltage | VDx ope-circuited | -2 | 0,6 | V |
Tstg | Storage temperature | -55 | +150 | °C | |
Tj | Junction temperature | +150 | °C | ||
Tamb | Ambient temperature | -40 | +85 | °C | |
Pinmax | Maximum RF input power in CW | +16 | dBm |
Thermal Characterstics
Symbol | Parameter | Value | UNIT |
Rth (j-a) | Thermal resistance from junction to ambient (DC power at Ta =25 °C) | TBD | °C/W |
DC CHARACTERISTICS
Tamb = + 25°C, VDD = 1 V; unless otherwise specified.
Symbol | Parameter | Conditions | MIN. | TYP. | MAX. | UNIT |
VD1, VD2, VD3, VD4 | Drain voltage | +0.8 | +1 | +1.2 | V | |
ID total | Total Drain current | See notes 1, 2 | 33 | mA | ||
VG1, VG2, VG3, VG4 | Gate supply voltage | -0.1 | 0.0 | +0.1 | V |
NOTE
1. As bias is considered to be a drain VD voltage and a drain current ID, we have VG1 determining the drain current ID1, VG2 determining the drain current ID2, VG3 determining the drain current ID3 and VG4 determining the drain current ID4. Bias currents are set in NO RF conditions.
2. Total drain current ID total = ID1 + ID2 + ID3 + ID4 with ID1 = ID2 = ID3 = ID4
RF CHARACTERISTICS
Tamb = 25 °C, all VD = 1 V, all VG = 0 V, ID total = 33 mA. On-wafer measurements using 50 Ω RF probes. Unless otherwise specified.
Symbol | Parameter | Conditions | MIN. | TYP. | MAX. | UNIT |
Gain | Reference Gain | F = 75 GHz to 90 GHz | 25 | dB | ||
F = 90 GHz to 110 GHz | 22 | dB | ||||
S11 | Input return loss | F = 75 GHz to 90 GHz | -6 | dB | ||
F = 90 GHz to 110 GHz | -6 | dB | ||||
S22 | Output return loss | F = 75 GHz to 90 GHz | -12 | dB | ||
F = 90 GHz to 110 GHz | -4 | dB | ||||
S12 | Isolation | F = 75 GHz to 90 GHz | -35 | dB | ||
P1dB | 1dB compression point | 1 | dBm | |||
NF | Noise Figure | F = 90 GHz | 2.8 | dB | ||
F = 75 GHz to 110 GHz | 3.3 | dB | ||||
K | Microwave stability factor. | F = 75 GHz to 110 GHz | 1 |
![]() |
Caution: This device is a high-performance RF component and can be damaged by inappropriate handling. Standard ESD precautions should be followed. OMMIC document “OMCI-MV/ 001/ PG” contains more information on the precautions to take. |
Reviews
There are no reviews yet.