CGY2120XUH-C1, 5GHz to 7GHz Ultra Low Noise C-Band Amplifier

5GHz to 7GHz Ultra Low Noise C-Band Amplifier

Name: 5GHz to 7GHz Ultra Low Noise C-Band Amplifier
SKU: CGY2120XUH/C1
Price: 181.41 USD
Availability: InStock

$181.41

– Part No.: CGY2120XUH/C1

– Manufacturer: OMMIC
– Operating Range 5 GHz to 7 GHz

– Noise Figure 0.5 dB at 6 GHz

– Gain 13.2 dB at 6 GHz
– Input Return Loss 6 dB at 6 GHz

– Samples Available

– Tested, Inspected Known Good Die (KGD)

– Chip size 1.5 mm x 2.0 mm

Quantity	Discount (%)	Price
1 - 24	—	$181.41
25 - 99	6.67 %	$169.31
100 - 499	12.5 %	$158.73
500 - 999	19.98 %	$145.16
1,000 - 1,999	31.39 %	$124.46
2,000+	44.12 %	$101.37

The CGY2120XUH is a high-performance GaAs single-stage Low Noise Amplifier MMIC designed to operate on the C band.

The CGY2120XUH has an exceptionally low noise figure of 0.5 dB with 13 dB of gain. It can be used in Radar, Telecommunication, and Instrumentation applications.

The die is manufactured using OMMIC’s Advanced 70 nm gate length high Indium content MHEMT Technology. The MMIC uses gold bonding pads and backside materialization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

Feature

Operating Range 5 GHz to 7 GHz
Noise Figure 0.5 dB at 6 GHz
Gain 13.2 dB at 6 GHz
Input Return Loss 6 dB at 6 GHz
Output Return Loss 12 dB at 6 GHz
Chip size 1.5 mm x 2.0 mm
Tested, Inspected Known Good Die (KGD)
Samples Available

APPLICATION

Radar
Instrumentation
Telecommunications

Limiting Values

T_amb = + 25°C unless otherwise specified.

Symbol	Parameter	Conditions	MIN.	MAX.	UNIT
V_DD	Drain voltage		0	1.2	V
I_D	Total Drain current			60	mA
V_GG	Gate supply voltage	V_D open-circuited	-2.5	0	V
T_stg	Storage temperature		-55	+150	°C
T_j	Junction temperature			+150	°C
T_amb	Ambient temperature		-40	+85	°C

Thermal Characterstics

Symbol	Parameter	Value	UNIT
R_{th (j-a)}	Thermal resistance from junction to backside (T_a = 25 °C)	TBD	°C/W

DC & RF CHARACTERISTICS

T_amb = + 25°C, On-wafer measurement results, using 50 Ω RF probes unless stated otherwise.

Symbol	Parameter	Conditions	MIN.	TYP.	MAX.	UNIT
*DC characteristics*
V_DD	Drain voltage			1	+1.2	V
I_DD	Drain current			50		mA
V_GG	Gate Supply voltage		-2.5	-0.15	0	V
*RF characteristics*
BW	Useful bandwidth		5		7	GHz
Gain	Reference Gain	F=6GHz		13.2		dB
S₁₁	Input return loss			-6.8	-6	dB
S₂₂	Output return loss			-12	-6	dB
S₁₂	Isolation	F=6GHz		-19		dB
NF	Noise Figure	F=6GHz		0.5		dB
P_1dB	Output P1dB compression point			12		dBm

Caution: This device is a high-performance RF component and can be damaged by inappropriate handling. Standard ESD precautions should be followed. OMMIC document “OMCI-MV/ 001/ PG” contains more information on the precautions to take.

Performance

Measured Performance

T_amb = 25 °C, V_DD =1V, I_DD = 50 mA. On-wafer measurement results, using 50 Ω RF probes

NB :This product was originally designed to achieve optimal matching and NF performances with bondwires on both ends of the circuit, whereas the presented results were obtained on wafer, using 50 Ω RF probes.

Parameters

CGY2120XUH-C1, Typical Scattering Parameters

T_amb = 25 °C, V_DD =1V, I_DD = 50 mA. On-wafer measurement results, using 50 Ω RF probes

Frequency (GHz)	\|S11\| (dB)	Ang S11 (°)	\|S12\| (dB)	Ang S12 (°)	\|S21\| (dB)	Ang S21 (°)	\|S22\| (dB)	Ang S22 (°)
4	-4.823	-80.1	-24.05	132.1	14.28	155.9	-4.839	-90.55
4.25	-5.201	-86.35	-23.13	124.5	14.25	147.4	-5.589	-97.05
4.5	-5.529	-91.68	-22.42	117.6	14.2	139.9	-6.326	-103.3
4.75	-5.919	-96.25	-21.65	110.7	14.09	131.9	-7.209	-110.2
5	-6.112	-100.1	-21.07	104.7	14.01	125.2	-8.054	-116.9
5.25	-6.289	-103.2	-20.5	98.56	13.84	118.3	-9.026	-124.2
5.5	-6.398	-106.5	-20	93.02	13.72	112.1	-10.03	-132
5.75	-6.556	-108.1	-19.52	87.41	13.43	105.9	-11.14	-140.3
6	-6.655	-110.7	-19.09	82.05	13.29	99.46	-12.33	-149.7
6.25	-6.648	-112.4	-18.67	77.28	13.07	94.07	-13.5	-160.3
6.5	-6.664	-114.3	-18.32	72.41	12.85	88.19	-14.68	-172
6.75	-6.537	-116.1	-17.96	67.58	12.64	83.06	-15.87	174.1
7	-6.469	-118	-17.63	62.74	12.41	77.66	-16.88	158.4
7.25	-6.312	-120	-17.29	57.95	12.17	72.96	-17.59	140.7
7.5	-6.243	-121.6	-16.97	53.27	11.92	67.77	-17.84	121.9
7.75	-6.087	-123.3	-16.68	49.11	11.68	63.06	-17.5	104.6
8	-5.959	-125.3	-16.49	45.39	11.42	58.21	-16.78	90.01
Frequency (GHz)	\|S11\| (dB)	Ang S11 (°)	\|S12\| (dB)	Ang S12 (°)	\|S21\| (dB)	Ang S21 (°)	\|S22\| (dB)	Ang S22 (°)

Application

Application Information

Typical application scheme

A reference module layout is shown below, where RF input and output microstrip transmission lines are used. However, coplanar transmission lines with similar performance may also be used. All path lengths and physical sizes of the components should be minimized.

All RF input and output bonding inductances should be minimized to give the best performance. Overall wire length should be kept as small as possible to reduce parasitic inductance. Higher RF input/output inductance may result in a degradation of gain and match. Ribbon bonding technique can also be used.

All others bondings (pads V_DD and V_GG ) should be kept as short as possible.

Decoupling 47 pF and 100 pF chip capacitors (close to the chip) and 100 nF chip or SMD* capacitors (positioned at around 4mm from the chip) are used to improve the power supply rejection.

The chip itself has via holes connecting the front side to the backside of the chip. A good RF grounding connection should be maintained between the backside of the chip and system ground. It is extremely important to use an uninterrupted ground plane. AuSn or silver conductive epoxy material can be used for die attachment.

*Surface Mount Devices

Information

Operating and Handling Instructions

The CGY2120XUH/C1 is a very high performance MHEMT device and as such, care must be taken at all times to avoid damage due to inappropriate handling, mounting and biasing conditions.

1- Power Supply SequenceThe following power supply sequence is recommended.a) Make sure the transient peaks from DC supply voltages do not exceed the limiting values.b) Pinch off the device by setting V_GG to -2V.c) Increase V_DD to +1Vd) Increase the gate voltages V_GG from -2V until the drain current reaches 50 mA.e) Apply the RF input signal.2- Mounting and ESD handling precautionsFor high performance Integrated Circuits, such as the CGY2120XUH/C1, care must be taken when mounting GaAs MMICs so as to correctly mount, bond and hence obtain the most reliable long-term operation. The temperature, duration and material compatible with GaAs MMICs and the precautions to be taken are described in OMMIC’s document “OM-CI-MV/001/PG”, entitled, “Precautions for use III-V products”.

Pad Configuration

Pad Position

SYMBOL	PAD	COORDINATES		DESCRIPTION
SYMBOL	PAD	X	Y	DESCRIPTION
GND	1	140	840	Connected to ground with on-chip via hole
IN	2	140	980	RF input
GND	3	140	1120	Connected to ground with on-chip via hole
V_DD	4	760	1860	Drain supply voltage, must be decoupled to ground using external capacitor(s)
GND	5	1060	1860	Connected to ground with on-chip via hole
GND	6	1360	1120	Connected to ground with on-chip via hole
OUT	7	1360	980	RF Output
GND	8	1360	840	Connected to ground with on-chip via hole
GND	9	790	140	Connected to ground with on-chip via hole
V_GG	10	490	140	Gate supply voltage, must be decoupled to ground using external capacitor(s)

Mechanical Information

PARAMETER		VALUE
Size		1500 x 2000 µm
Thickness		100 µm
Backside material		TiAu
Passivation		PECVD deposited Si₃N₄
Bonding pad dimensions	GND RF	80 x 100 µm
	IN, OUT, V_DD, V_GG, GND DC	80 x 80 µm

NOTE
The die size and all pad positions refer to the mask layout, with (X=0, Y=0) at the bottom left corner of the layout. For each pad, the (X,Y) coordinates refer to the center of the pad.
Wafers are diced by sawing, with a sawline width of 35 μm (± 5 μm). A misalignment of the sawline with the middle of the dicing street (± 20 μm on all sides) may also result in a variation of ± 20 μm of the actual positions of the pads on the diced chip and an additional tolerance of ± 40 μm on the die size.