The CGY2122XUH is a high-performance GaAs Low Noise Amplifier MMIC designed to operate in the Ka Band.
The CGY2122XUH has an exceptionally low noise figure of 1.5dB and 32dB of gain over the whole 25-43 GHz frequency band. The on chip matching provides 8 dB of Input Return Loss and Output Return Loss over the frequency range. It can be used in Radar, Telecommunication, and instrumentation applications.
The die is manufactured using OMMIC’s advanced 70nm gate length high indium contain MHEMT technology. The MMIC uses gold bonding pads and backside metallization and is fully protected with silicon nitride passivation to obtain the highest level of reliability.
Feature
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Operating frequency range : 25 to 43 GHz
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Noise Figure : 1.5 dB from 25 to 43 GHz
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Gain : 32dB
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Input Return Loss : > 8 dB
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Output Return Loss : > 8 dB
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Power Supply : 30 mA at 1.1V
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Die size = 3 x 2 mm
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Tested, Inspected Known Good Die (KGD)
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Demonstration Boards available
APPLICATION
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Radar
- Telecommunications
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Instrumentation
- SATCOM

Maximum Values
Tamb = + 25°C, at Die backside; unless otherwise specified.
Symbol | Parameter | Conditions | MIN. | MAX. | UNIT |
VG1, VG2, VG3, VG4 | Gate voltage | – 2.5 | 0 | V | |
VD1, VD2, VD3, VD4 | Drain voltage | 0 | 1.2 | V | |
ID1, ID2, ID3, ID4 | Drain current | 50 | mA | ||
IG1, IG2, IG3, IG4 | Gate Current | – 1 | + 1 | mA | |
PIN | RF Input power | +1 | dBm | ||
Tamb | Ambient temperature | -40 | +85 | °C | |
Tj | Junction temperature | +175 | °C | ||
Tstg | Storage temperature | -55 | +85 | °C |
Operation of this device outside the parameter ranges given above may cause permanent damage
Thermal Characterstics
Symbol | Parameter | Value | UNIT |
Rth (j-amb) | Thermal resistance from junction to ambient (DC power at Tamb max) | TBD | °C/W |
ELECTRICAL CHARACTERISTICS
Tamb = + 25°C, VD1, VD2, VD3, VD4 = 1.1V, ID1, ID2, ID3, ID4 = 7.5 mA, unless otherwise specified.
Symbol | Parameter | Conditions | MIN. | TYP. | MAX. | UNIT |
RFin | Input frequency | 25 | 43 | GHz | ||
Performances on Reference Board at fi = 29 GHz | ||||||
VD1, 2, 3, 4 | Drain Supply voltage | +1.1 | V | |||
ID1, 2, 3, 4 | Total Supply current | VD1, 2, 3, 4 = 1.1 V | 30 | mA | ||
G | Gain | 32 | dB | |||
NFMIN | Minimum Noise Figure | @32GHz | 1.2 | dB | ||
NF | Noise Figure | 1.5 | dB | |||
P1dB | 1dB compression point | 1.2 | dBm | |||
OIP3 | Output third order intercept point | 10 | dBm | |||
ISOrev | Reverse Isolation | RFOUT/RFIN | -50 | dB | ||
S11 | Input reflection coefficient | 50 Ohms | -8 | dB | ||
S22 | Output reflection coefficient | 50 Ohms | -8 | dB |
(*) Measurement reference planes are the INPUT and OUTPUT plans of the CGY2122XUH MMIC.
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Caution: This device is a high-performance RF component and can be damaged by inappropriate handling. Standard ESD precautions should be followed. OMMIC document “OMCI-MV/ 001/ PG” contains more information on the precautions to take. |
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