The CGY2121XUH/C2 is a high-performance GaAs Low Noise Amplifier MMIC designed to operate in the K band.
The CGY2121XUH/C2 has an exceptionally low noise figure of 1.2 dB with a very flat 19 dB of gain (+/-0.4dB). The on chip matching provides 12 dB of Input Return Loss and 11 dB of Output Return Loss. Thanks to the DC regulation the gain and noise are very stable wrt temperature change. It can be used in Radar, Telecommunication, and Instrumentation applications.
The die is manufactured using OMMIC’s Advanced 70 nm gate length high Indium content MHEMT Technology. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.
Feature
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Operating frequency range : 18 to 26 GHz
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Flat Gain: 19dB (+/-0.4dB) overall bandwidth
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Noise Figure: < 1.5 dB on overall bandwidth (1.2dB at 22GHz)
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Single positive and negative supply (+ and -1.5V)
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Low consumption : <92mW
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OP1dB : > 5dBm ( 7dBm@22GHz)
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Robust : Max +19dBm CW Input power
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50 Ohms input and output matched
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Input Return Loss: > 12 dB at 22GHz
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Output Return Loss: > 11 dB at 22GHz
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Die size = 1.5 x 2.0 mm
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Production Tested, Inspected Known Good Die (KGD)
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Samples and Demonstration Board Available
APPLICATION
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Radar
- Telecommunications
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Instrumentation

CGY2121XUH/C2 picture
Maximum Values
Tamb = + 25°C, unless otherwise specified.
Symbol | Parameter | Conditions | MIN. | MAX. | UNIT |
VS | Gate Voltage | VD open circuit | -3.0 | 0 | V |
VD | Drain voltage | VD open circuit | 0 | +3 | V |
IS / ID | Current | 10/100 | mA | ||
PIN | RF Input power | CW | +19 | dBm | |
Tamb | Ambient temperature | -40 | +85 | °C | |
Tj | Junction temperature | +150 | °C | ||
Tstg | Storage temperature | -55 | +150 | °C |
Operation of this device outside the parameter ranges given above may cause permanent damage
Thermal Characterstics
Symbol | Parameter | Value | UNIT |
Rth (j-amb) | Thermal resistance from junction to ambient (DC power at Tamb max) | TBD | °C/W |
ELECTRICAL CHARACTERISTICS
Tamb = + 25°C, Vd = 1.5V, Vs = -1.5V unless otherwise specified.
Symbol | Parameter | Conditions | MIN. | TYP. | MAX. | UNIT |
RFin | Input frequency | 18 | 26 | GHz | ||
Performances on Reference Board with 0.25nH bonding parasitic inductor at input and output | ||||||
VD | Drain Supply voltage | +1.3 | +1.5 | +1.7 | V | |
IS + ID | Drain Supply current | @Vd=1.3 / 1.5 / 1.7V | 44 | 61 | 78 | mA |
G | Gain | @Vd=1.3 / 1.5 / 1.7V | 18.4 | 19 | 19.7 | dB |
NFMIN | Noise Figure | 1.2 | 1.3 | 1.7 | dB | |
OP1dB | 1dB compression point | @20/22/24GHz | 6/7/8.5 | dBm | ||
ISOrev | Reverse Isolation | RFOUT/RFIN | -50 | -32 | dB | |
S11 | Input reflection coefficient | 50 ohms | -12 | -10 | dB | |
S22 | Output reflection coefficient | 50 ohms | -10 | -12 | -10 | dB |
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Caution: This device is a high-performance RF component and can be damaged by inappropriate handling. Standard ESD precautions should be followed. OMMIC document “OMCI-MV/ 001/ PG” contains more information on the precautions to take. |
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