The CGY2107HV is an extremely Low Noise cascode Amplifier with state-of-the-art Noise Figure and Linearity suitable for applications from 500 MHz to 6 000 MHz.
The CGY2107HV consists of two identical amplifiers on the same MMIC, and is ideal for use in a balanced configuration or as two single-ended amplifiers. Used as a balanced amplifier with 3 dB couplers, a 0.63 dB Noise Figure, 34 dBm Output IP3, and 23.5 dB Gain is obtained at 1.9 GHz. At 3.5 GHz a balanced demonstrator exhibits 0.85 dB Noise Figure, 19.5 dB Gain and OIP3 of 37 dBm. These are measured values and include the noise contribution of the couplers, connectors, and biasing circuitry. The minimum Noise Figure of the CGY2107HV itself is 0.32 dB at 1.9 GHz.
The MMIC is manufactured using OMMIC’s qualified 0.25 µm PHEMT GaAs MMIC technology. The device is available in a 4×4 mm QFN plastic package.
Feature
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Usable Frequency Range from 500 MHz to 6000 MHz
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Dual MMIC LNA with Excellent Tracking
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Amplifier NFmin@1.9GHz = 0.32 dB
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Low Noise, High Gain and high IP3 in Balanced Configuration :
NF=0.63 dB, Gain=23.5 dB, OIP3=34 dBm @ 1.9 GHzNF=0.7 dB, Gain=21 dB, OIP3=33 dBm @ 2.5 GHz
NF=0.85 dB, Gain=19.5 dB, OIP3=37 dBm @ 3.5 GHz
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Use a High Reliable PHEMT MMIC Process
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Delivered as 100% RF Tested Devices
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Samples and Demonstration Boards Available
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Space and MIL-STD Available
APPLICATION
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High Performance LNA in The Band 0.5-6 GHz
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Base Station Applications (LTE, GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, WiMAX, etc)
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Tower Mounted Amplifiers
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Repeaters

Limiting Value
Tamb = + 23°C, at QFN package lead; unless otherwise specified.
Symbol | Parameter | Conditions | MIN. | MAX. | UNIT |
VEE1, VEE2 | Gate voltage | VDD open-circuited | -3 | +1 | V |
VDD1, VDD2 | Drain voltage | VEE open-circuited | -1 | +10 | V |
ID1, ID2 | Drain current | 100 | mA | ||
PIN | Input power | 10 | dBm | ||
Tamb | Ambient temperature | -40 | +85 | °C | |
Tj | Junction temperature | +150 | °C | ||
Tstg | Storage temperature | -55 | +150 | °C |
Thermal Characterstics
Symbol | Parameter | Value | UNIT |
Rth (j-a) | Thermal resistance from junction to ambient (Ta = 25 °C) | 70 | °C/W |
CHARACTERISTICS
Tamb = + 23°C
Symbol | Parameter | Conditions | MIN. | TYP. | MAX. | UNIT |
fi | Input frequency | 0.5 | 6 | GHz | ||
Performance at QFN package lead; fi = 1.9 GHz |
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VD | Supply voltage | 4 | V | |||
ID | Supply current | VEE = -0.55 V | 50 | mA | ||
G | Gain | 22.7 | dB | |||
NFmin | Minimum Noise Figure | 0.32 | dB | |||
Performance * of Reference Board (Single Ended configuration with on-board bias resistors); fi = 1.95 GHz |
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VDD | Supply voltage | 5 | V | |||
ID | Supply current | VEE1 = VEE2 = -0.55 V | 50 | mA | ||
G | Gain | 23 | 24 | dB | ||
NF | Noise Figure | 0.5 | dB | |||
ISOrev | Reverse Isolation | OUT/IN | 32 | dB | ||
IIP3 | Input third order intercept point | ID = 70mA | 3.5 | 7 | dBm | |
S11 | Input reflection coefficient | 50 Ω source | -4.5 | dB | ||
S22 | Output reflection coefficient | 50 Ω load | -10 | dB | ||
ISOIN1-IN2 | Isolation between IN1 and IN2 | IN1/IN2 | 30 | dB | ||
Performance * of Demonstration Board (Balanced configuration with on-board bias resistors); fi = 1.9 GHz |
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VDD1, VDD2 | Supply voltage | 5 | V | |||
ID1, ID2 | Supply current | VEE1 = VEE2 = – 0.66 V | 50 | mA | ||
G | Gain | 23.4 | dB | |||
NF | Noise Figure | 0.63 | dB | |||
IIP3 | Input third order intercept point | 11 | dBm | |||
P1dB | Output Power @ 1dB gain compression | 22 | dBm | |||
S11 | Input reflection coefficient | 50 Ω source | -25.6 | dB | ||
S22 | Output reflection coefficient | 50 Ω load | -23.9 | dB |
(*) Measurement reference planes are the INPUT and OUTPUT SMA connectors.
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Caution: This device is a high-performance RF component and can be damaged by inappropriate handling. Standard ESD precautions should be followed. OMMIC document “OMCI-MV/ 001/ PG” contains more information on the precautions to take. |
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