The CGY2105XHV/C1 is an extremely Low Noise Figure Dual Amplifier with state-of-the-art Noise Figure and Linearity suitable for applications from 500 MHz to 4 000 MHz.
The CGY2105XHV/C1 consists of two identical amplifiers on the same MMIC and is ideal for use in a balanced configuration. Extremely low noise, high gain, and high IP3 results have been achieved on several demonstrators. The minimum Noise Figure of the CGY2105XHV itself is 0.23 dB at 1.9 GHz.
The MMIC is manufactured using OMMIC’s qualified 0.13 µm PHEMT GaAs D01PH technology. The D01PH process is one of the European Space Agency (ESA) European preferred part list (EPPL) technologies. The device is available in a 4×4 mm QFN plastic package.
Feature
-
Usable Frequency Range from 500 MHz to 4000 MHz
-
Low Noise, High Gain and high IP3 in Balanced Configuration:
NF=0.42 dB, Gain=19 dB, OIP3=35 dBm, P1dB=21 dBm @1.9 GHzNF=0.5 dB, Gain=18.5 dB, OIP3=33 dBm, P1dB=21 dBm @2.5 GHz
-
Dual MMIC LNA with Excellent Tracking
-
Use a High Reliable PHEMT MMIC Process
-
Delivered as 100% RF Tested Devices
-
Samples and Demonstration Boards Available
-
Space and MIL-STD Available
APPLICATION
-
High Performance LNA in The Band 0.5-4 GHz
-
Base Station Applications (LTE, GSM, CDMA, WCDMA, TD-SCDMA, CDMA2000, WiMAX, etc)
-
Tower Mounted Amplifiers
-
Repeaters

Limiting Value
Tamb = + 23°C, at QFN package lead; unless otherwise specified.
Symbol | Parameter | Conditions | MIN. | MAX. | UNIT |
VEE1, VEE2 | Gate voltage | VDD open-circuited | -3 | 0 | V |
VDD1, VDD2 | Drain voltage | VEE open-circuited | 0 | +6 | V |
ID1, ID2 | Drain current | 200 | mA | ||
PIN | Input power | 10 | dBm | ||
Tamb | Ambient temperature | -40 | +85 | °C | |
Tj | Junction temperature | +150 | °C | ||
Tstg | Storage temperature | -55 | +150 | °C |
Thermal Characterstics
Symbol | Parameter | Value | UNIT |
Rth (j-a) | Thermal resistance from junction to ambient (Ta = 25 °C) | TBD | °C/W |
CHARACTERISTICS
Tamb = + 23°C
Symbol | Parameter | Conditions | MIN. | TYP. | MAX. | UNIT |
fi | Input frequency | 0.5 | 4 | GHz | ||
Performance at QFN package lead; fi = 1.9 GHz |
||||||
VD | Supply voltage | 3 | V | |||
ID | Supply current | VEE = – 0.45 V | 50 | mA | ||
G | Gain | 19.4 | dB | |||
NFmin | Minimum Noise Figure | 0.23 | dB | |||
ISOIN1-IN2 | Isolation between IN1 and IN2 | IN1/IN2 | 35 | dB | ||
Performance * of Reference Board (Balanced configuration with on-board bias resistors); fi = 1.9 GHz |
||||||
VDD1, VDD2 | Supply voltage | 5 | V | |||
ID1, ID2 | Supply current | VEE1 = VEE2 = – 0.56 V | 50 | mA | ||
G | Gain | 19 | dB | |||
NF | Noise Figure | 0.42 | dB | |||
ISOrev | Reverse Isolation | OUT/IN | 23 | dB | ||
OIP3 | Output third order intercept point | 35 | dBm | |||
P1dB | Output Power @ 1dB gain compression | 21 | dBm | |||
S11 | Input reflection coefficient | 50 Ω source | -22 | -18 | dB | |
S22 | Output reflection coefficient | 50 Ω load | -22 | dB |
(*) Measurement reference planes are the INPUT and OUTPUT SMA connectors.
![]() |
Caution: This device is a high-performance RF component and can be damaged by inappropriate handling. Standard ESD precautions should be followed. OMMIC document “OMCI-MV/ 001/ PG” contains more information on the precautions to take. |
Reviews
There are no reviews yet.